The hole mobility of Be‐doped ( ~ 2 × 1017 cm-3) AlxGa1-xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p‐type AlxGa1-xAs.
Look, D. C.,
Lorance, D. K.,
Sizelove, J. R.,
Stutz, C. E.,
Evans, K. R.,
& Whitson, D. W.
(1992). Alloy Scattering in P-Type Alxga1-Xas. Journal of Applied Physics, 71 (1), 260-266.
Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 71.1, and may be found at http://jap.aip.org/resource/1/japiau/v71/i1/p260_s1