Mechanisms for GaAs Surface Passivation by a Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. Walters
C. E. Stutz
K. R. EvansFollow
J. R. Sizelove

Document Type

Article

Publication Date

6-1-1992

Abstract

A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive layer significantly reduces the free‐electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual E_C−0.7 eV surface states are absent, (2) a dense donor near E_C−0.4 eV exists or (3) a high donor interface charge (∼5×10¹² cm⁻²) is present. Any of these conclusions constitutes an important new aspect of low‐temperature MBE GaAs.

Comments

Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 71.12, and may be found at http://jap.aip.org/resource/1/japiau/v71/i12/p5981_s1

Repository Citation

Look, D. C., Walters, D. C., Stutz, C. E., Evans, K. R., & Sizelove, J. R. (1992). Mechanisms for GaAs Surface Passivation by a Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C. Journal of Applied Physics, 71 (12), 5981-5984.
https://corescholar.libraries.wright.edu/physics/120

DOI

10.1063/1.350450