Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.
Look, D. C.,
Sizelove, J. R.,
Mier, M. G.,
& Stutz, C. E.
(1994). Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures. Journal of Applied Physics, 76 (2), 1029-1032.