Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.
Look, D. C.,
Sizelove, J. R.,
Mier, M. G.,
& Stutz, C. E.
(1994). Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures. Journal of Applied Physics, 76 (2), 1029-1032.
Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 76.2, and may be found at http://jap.aip.org/resource/1/japiau/v76/i2/p1029_s1.