Effects of in Profile on Material and Device Properties of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors
The molecular‐beam‐epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal ‘‘square’’ In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone.
Look, D. C.,
Ebel, J. L.,
Evans, K. R.,
Jones, R. L.,
Sherriff, R. E.,
Stutz, C. E.,
DeSalvo, G. C.,
& Ito, C.
(1996). Effects of in Profile on Material and Device Properties of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors. Journal of Applied Physics, 79 (1), 540-544.
Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 79.1, and may be found at http://jap.aip.org/resource/1/japiau/v79/i1/p540_s1