A simple experiment involving only the measurement of dark current Idark and 1.1 μm photocurrent IPC in semi‐insulating (SI) GaAs allows an accurate determination of the electron capture cross section σn for the important defect EL2 in GaAs. For 45 SI GaAs samples, from 12 different boules, grown by three different techniques, we find that IPC/Idark=1.96±0.05 at 300 K. This relationship gives σn=1.4±0.4×10−16 cm2, which is compared to previously estimated values.
Look, D. C.,
& Fang, Z.
(1996). Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs. Journal of Applied Physics, 80 (6), 3590-3591.
Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 80.6, and may be found at http://jap.aip.org/resource/1/japiau/v80/i6/p3590_s1