High quality GaN crystals can be grown on sapphire by hydride vapor phase epitaxy. The thermal expansion mismatch between sapphire and GaN produces strain in the GaN crystal as it is cooled from the growth temperature to room temperature. The strain is evidenced by shifts in the photoluminescence and reflectance line positions. By analyzing the surface strain as the crystal thickness is increased, the thickness required to obtain zero surface strain can be estimated. This structure might provide a lattice matched and thermally matched substrate for further epitaxial growth of GaN.
Reynolds, D. C.,
Look, D. C.,
Hoelscher, J. E.,
Sherriff, R. E.,
& Molnar, R. J.
(2000). Strain Variation with Sample Thickness in GaN Grown by Hydride Vapor Phase Epitaxy. Journal of Applied Physics, 88 (3), 1460-1463.
Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 88.3, and may be found at http://jap.aip.org/resource/1/japiau/v88/i3/p1460_s1