High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence

Authors

D. C. Reynolds
David C. Look, Wright State University - Main CampusFollow
B. Jogai
R. Kaspi
K. R. Evans
M. Estes

Document Type

Article

Publication Date

9-1-1997

Comments

Copyright © 1997, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in 15.5, and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v15/i5/p1703_s1

Repository Citation

Reynolds, D. C., Look, D. C., Jogai, B., Kaspi, R., Evans, K. R., & Estes, M. (1997). High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence. Journal of Vacuum Science & Technology B, 15 (5), 1703-1706.
https://corescholar.libraries.wright.edu/physics/172

DOI

10.1116/1.589358