A novel system capable of making on‐wafer Hall‐effect measurements of a patterned wafer during the fabrication sequence has been developed. A flat, powerful rare‐earth magnet provides the magnetic field required. The wafer need only have van der Pauw patterns available for on‐wafer measurement capability. Measurement of room temperature Hall mobility can quickly and easily be obtained, making possible detailed study of carrier concentration and mobility variations during wafer fabrication.
Mumford, P. D.,
& Look, D. C.
(1991). On-Wafer Hall-Effect Measurement System. Review of Scientific Instruments, 62 (6), 1666-1667.
Copyright © 1991, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in 62.6, and may be found at http://rsi.aip.org/resource/1/rsinak/v62/i6/p1666_s1