Effects of Surface Conduction on Hall-Effect Measurements in ZnO

Authors

David C. Look, Wright State University - Main CampusFollow
Howard L. MosbackerFollow
Yuri M. StrzhemechnyFollow
Leonard J. BrillsonFollow

Document Type

Article

Publication Date

2005

Abstract

Conduction processes in as-grown and annealed n-type ZnO crystals have been studied by means of Hall-effect measurements and X-ray photoelectron spectroscopy (XPS). For temperatures above approximately 50 K, the conductance is dominated by electrons in the bulk of the crystal, whereas below that temperature, surface conductance becomes more important. As the crystals are annealed in flowing N₂ gas, the surface sheet carrier concentration increases, and concomitantly, the OH-bond peak in the XPS spectrum becomes a larger fraction of the total O peak. Conversely, either O₂-plasma annealing or electron-beam irradiation produces a decrease in the surface conductance and the OH fraction. Thus, H-related donors are likely the cause of the surface conductance.

Repository Citation

Look, D. C., Mosbacker, H. L., Strzhemechny, Y. M., & Brillson, L. J. (2005). Effects of Surface Conduction on Hall-Effect Measurements in ZnO. Superlattices and Microstructures, 38 (4-6), 406-412.
https://corescholar.libraries.wright.edu/physics/228

DOI

10.1016/j.spmi.2005.08.013