P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications

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ZnO has distinct advantages over competing technologies such as GaN. Two advantages are the inherent improvement in ultraviolet (UV) brightness, necessary for the biological sensor application where the signal-to-noise ratio (SNR) is enhanced by a bright UV source, and the second is the availability of ZnO lattice-matched substrates, which will result in lower defect densities than GaN, higher manufacturing yield, and then lower cost. The ZnO material system’s advantage in exciton binding energy of 60 MeV, a three-time improvement over GaN, will result in UV emitters with superior performance.


A correction to this article was published in the Journal of Electronic Materials, Volume 34, Issue 8, August 2005, p. 1183, DOI: 10.1007/s11664-005-0249-4. Two of the original authors, Robert F. Davis and Jon Pierce, were omitted.