We have studied the Ec - 0.4 e V center in O-doped GaAs by a combination of temperature-dependent Hall-effect measurements, spark-source mass spectroscopy, and secondary-ion mass spectroscopy. The conclusion is that neither 0 nor any other impurity can account for the O.4-eV center; therefore, it is a pure defect.
Look, D. C.,
& Sizelove, J. R.
(1983). Defect Nature of the 0.4-Ev Center in O-Doped GaAs. Applied Physics Letters, 42 (9), 829-831.
Copyright © 1983, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 42.9, and may be found at http://apl.aip.org/resource/1/applab/v42/i9/p829_s1