Low-Energy Electron-Excited Nanoluminescence Studies of GaN and Related Materials

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Conference Proceeding

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We have used low-energy electron-excited nanoluminescence (LEEN) spectroscopy combined with ultrahigh vacuum surface analysis techniques to obtain electronic bandgap, confined state and deep-level trap information from III nitride compound semiconductor surfaces and their buried interfaces on a nanometer scale. Localized states are evident at GaN/InGaN quantum wells, GaN ultrathin films, AlGaN/GaN pseudomorphic heterostructures, and GaN/Al2O3 interfaces that are sensitive to the chemical composition, bonding and atomic structure near interfaces, and in turn to the specifics of the epitaxial growth process. Identification of electrically active defects in these multilayer nanostructures provides information to optimize interface growth and control local electronic properties. (C) 2002 Elsevier Science B.V. All rights reserved.


This paper was presented at the 8th International Conference on the Formation of Semiconductor Interfaces, June 10-15, 2001 in Sapporo, Japan.