Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and its Impact on Schottky Barrier Formation
Nanoscale depth-resolved cathodoluminescence spectroscopy calibrated with deep level transient spectroscopy of native point defects and capacitance-voltage measurements of free carrier densities, all at the same metal-semiconductor interface, demonstrate that native point defects can (i) increase by order-of-magnitude in densities with tens of nanometers of the semiconductor surface, (ii) alter free carrier concentrations and band profiles with the surface space charge regions, and (iii) dominate the Schottky barrier formation for metal contacts to ZnO and many other single crystal compound semiconductors. The spatial redistribution of electrically active defects within the surface space charge can be understood in terms of temperature-dependent atomic diffusion enabled by low formation energies and driven by strain and electric fields as well as metal-specific chemical reactions near room temperature, consistent with first-principles calculations of interfacial segregation and migration barriers. These results underscore the importance of native point defects in charge transport and barrier formation at semiconductor interfaces. (C) 2009 Elsevier B.V. All rights reserved.
Brillson, L. J.,
Doutt, D. R.,
Look, D. C.,
& Fang, Z.
(2009). Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and its Impact on Schottky Barrier Formation. Physica B-Condensed Matter, 404 (23-24), 4768-4773.
This paper was presented at the 25th International Conference on Defects in Semiconductors, July 20-24, 2009 in Saint Petersburg, Russia.