Characterization of Deep Centers in Bulk N-Type 4H-SiC

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Conference Proceeding

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Nitrogen-related shallow centers and defect- and impurity-related deep centers in nitrogen doped bulk n-type 4H-SiC were characterized by high temperature Hall effect and deep level transient spectroscopy (DLTS) measurements. Two nitrogen centers at E-e-0.048 and -0.098 eV, with a concentration close to each other, and a poorly resolved deep donor level, with activation energy of 0.58 eV, were found by fitting the Hall-effect data. A dominant DLTS deep center is observed at E-e-0.61-0.63 eV due to electric field effect, with a concentration of similar to 1.2 x 10(15)cm(-3). The center is believed to be the Z(1) center (also called Z(1)/Z(2)(4H)), which is often observed in as-grown and implanted or irradiated 4H-SiC epilayers and is speculated to be a vacancy-type defect. Correlation between the Hall effect deep donor and Z(1) suggests that Z(1) is donor-like. (C) 2001 Elsevier Science B.V. All rights reserved.


This paper was presented at the 21st International Conference on Defects in Semiconductors, July 16-20, 2001, in Giessen, Germany.



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