Deep Centers in Conductive and Semi-Insulating GaN
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Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.
Farlow, G. C.,
& Look C.
(2004). Deep Centers in Conductive and Semi-Insulating GaN. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 29-36.