Deep Centers in as Grown and Electron-Irradiated N-GaN

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Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates V-N-related centers with activation energy E-T=0.06 eV and a center with E-T=0.85 eV, which might be related to N-I. Deep centers in as-grown materials show a close connection with high dislocation densities and some of them indeed behave like "line-defects". Based on comparisons with El-induced centers, some deep centers in as-grown materials are identified as possible point defects.


This paper is from the 11th Conference on Semiconducting and Insulating Materials, July 3-7, 2000 in Canberra, Australia.

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