Changes in Electrical Characteristics Associated With Degradation of InGaN Blue Light-Emitting Diodes
Because of the high concentration of threading dislocations, the reverse current-voltage (I-V) characteristics for either homo- or heterojunctions made on GaN-based materials grown on sapphire often show a strong electric field dependence (called a soft breakdown characteristic), which can be described by a power law I = V-n, with n between 4 to 5. We find a significant increase of reverse currents associated with the early degradation of emission in InGaN blue single-quantum-well light-emitting diodes (LEDs) subjected to aging tests (injected current of 70 mA over a total time of about 300 h). The formation of dislocations might be due to the relaxation of strain in the thin InGaN active layer during the aging tests.
Reynolds, D. C.,
& Look, D. C.
(2000). Changes in Electrical Characteristics Associated With Degradation of InGaN Blue Light-Emitting Diodes. Journal of Electronic Materials, 29 (4), 448-451.