Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy
We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4 x 10(-18) cm(2), is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.
Xie, Q. H.,
Look, D. C.,
Ehret, J. E.,
& Van Nostrand, J. E.
(1999). Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy. Journal of Electronic Materials, 28 (8), L13-L16.