Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy
Document Type
Article
Publication Date
1999
Abstract
We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4 x 10(-18) cm(2), is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.
Repository Citation
Fang, Z.,
Xie, Q. H.,
Look, D. C.,
Ehret, J. E.,
& Van Nostrand, J. E.
(1999). Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy. Journal of Electronic Materials, 28 (8), L13-L16.
https://corescholar.libraries.wright.edu/physics/396
DOI
10.1007/s11664-999-0210-z
