Metalorganic Chemical Vapor Deposition and Characterization of ZnO Materials
Document Type
Article
Publication Date
2006
Abstract
Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.
Repository Citation
Sun, S.,
Tompa, G. S.,
Hoerman, B.,
Look, D. C.,
Claflin, B.,
Rice, C. E.,
& Masaun, P.
(2006). Metalorganic Chemical Vapor Deposition and Characterization of ZnO Materials. Journal of Electronic Materials, 35 (4), 766-770.
https://corescholar.libraries.wright.edu/physics/412
DOI
10.1007/s11664-006-0136-7
