Radiation Hardness of ZnO at Low Temperatures
In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (min), even at 130 K.
Look, D. C.,
Farlow, G. C.,
& Sizelove, J. R.
(2004). Radiation Hardness of ZnO at Low Temperatures. Semiconductor Science and Technology, 19 (6), 752-754.