Characterization of GaN

Authors

David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1998

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Abstract

The rapidly developing material systems involving GaN and (Al, Ga, In)N must be thoroughly characterized in order for the field to advance in an efficient manner. Some of the more useful characterization techniques are: Hall effect, DLTS, and TSC, for electrical properties; photoluminescence and reflectance, for optical properties; x-ray and TEM, for structural properties; and SIMS for analytical properties. Also, theory is helpful in the identification of defects and impurities.

Comments

This paper was presented at the 7th International Conference of Defect Recognition and Image Processing in Semiconductors, September 7-10, 1997 in Templin, Germany.

Repository Citation

Look, D. C. (1998). Characterization of GaN. Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the 7th International Conference, 160, 339-346.
https://corescholar.libraries.wright.edu/physics/424