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The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers grown at 200 °C has not been achieved by thermal annealing.


Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 60.19, and may be found at



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