InxGa1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n‐type with a 296‐K resistivity of 9×105 Ω cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 109 Ω cm and the resistivity activation energy to 0.8 eV.
Look, D. C.,
& Bedair, S. M.
(1993). Semi-insulating Nature of Gas Source Molecular Beam Epitaxial InGaP Grown at Very Low Temperatures. Applied Physics Letters, 63 (9), 1231-1233.