This work shows how electrochemical capacitance‐voltage (EC‐V) measurements can be used to evaluate delta‐doped pseudomorphic high electron mobility transistor material. These EC‐V measurements are compared with magnetic‐field‐dependent Hall effect (M‐Hall) measurements and a self‐consistent Poisson/k⋅p calculation of the band structure and electron concentration. The EC‐V technique can clearly delineate the cap layer, the delta‐doped layer, and the InxGa1−xAs channel layer, whereas the M‐Hall method characterizes only the cap and InxGa1−xAs channel layers. The amount of electron charge seen by the EC‐V and M‐Hall measurements show good agreement with theory.
Stutz, C. E.,
Look, D. C.,
Ballingall, J. M.,
& Rogers, T. J.
(1994). Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material. Applied Physics Letters, 64 (20), 2703-2705.