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Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n+-GaN contact layer at 800 °C show a dominant trap C1 with activation energy ET = 0.44 eV and capture cross-section σT = 1.3×10−15 cm−2, while samples grown at 750 °C on an undoped semi-insulating GaN buffer show prominent traps D1 and E1, with ET = 0.20 eV and σT = 8.4×10−17 cm2, and ET = 0.21 eV and σT = 1.6×10−14 cm2, respectively. Trap E1 is believed to be related to a N-vacancy defect, since the Arrhenius signature for E1 is very similar to the previously reported trap E, which is produced by 1-MeV electron irradiation in GaN materials grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy.


Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 72.18, and may be found at



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