Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions/cm2 at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼103 Ω/□, after annealing at 900°C for 4 h.
Shin, B. K.,
Park, Y. S.,
& Look, D. C.
(1974). Electrical Characteristics of Al‐Implanted ZnSe. Applied Physics Letters, 24 (9), 435-436.