Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions/cm2 at room temperature. Hall‐effect and sheet‐resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n‐type having a sheet resistivity of ∼103 Ω/□, after annealing at 900°C for 4 h.
Shin, B. K.,
Park, Y. S.,
& Look, D. C.
(1974). Electrical Characteristics of Al‐Implanted ZnSe. Applied Physics Letters, 24 (9), 435-436.
Copyright © 1974, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 24.9, and may be found at http://dx.doi.org/10.1063/1.1655250.