Properties of Aℓ and P Ion-Implanted Layers in ZnSe
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Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature.
Park, Y. S.,
Shin, B. K.,
Look, D. C.,
& Downing, D. L.
(1975). Properties of Aℓ and P Ion-Implanted Layers in ZnSe. Ion Implantation in Semiconductors: Science and Technology, 245-252.