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Cadmium ions were implanted in GaAs crystals at 135 keV to doses ranging from 1012 to 1016 ion/cm2 at room temperature. Sheet‐resistivity and Hall‐effect measurements were carried out as a function of temperature, 4.2–300°K, after annealings at 700, 800, or 900°C in an Ar ambient. The sample surfaces were protected with pyrolytically deposited Si3N4. Significant p‐type conduction was observed when samples with doses ≳1013cm−2 were annealed at ≳700°C. For doses below 1014 cm−2 nearly complete electrical activity was attained after an 800–900°C anneal. The Cd profiles were determined by differential Hall‐effect measurements in conjunction with the acid‐etch layer‐removal technique. Above about 800°C diffusion becomes important and significantly flattens the implantation profile.


Copyright © 1976, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 47.4, and may be found at



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