Impurity Photomagnetoelectric Effect: Application to Semi-Insulating GaAs

Authors

David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

12-15-1977

Abstract

The theories of the photomagnetoelectric (PME) and photoconductivity (PC) effects in semiconductors are extended to include unequal excitation rates of holes and electrons, as might be expected from impurity photo-excitation. The results are applied to two semi-insulating Cr-doped GaAs crystals, which exhibit mixed conductivity. It is seen that the PC and PME effects give complementary information on the holes and electrons. In the impurity excitation region the PME current responds strongly to changes in the absorption coefficient, and provides a convenient way to study this quantity.

Comments

Copyright © 1977 The American Physical Society.

Look, D. C., Physical Review B, 16 (12), 5460-5465, 1977.

The following article appeared in Physical Review B 16(12), and may be found at http://link.aps.org/doi/10.1103/PhysRevB.16.5460.

Repository Citation

Look, D. C. (1977). Impurity Photomagnetoelectric Effect: Application to Semi-Insulating GaAs. Physical Review B, 16 (12), 5460-5465.
https://corescholar.libraries.wright.edu/physics/624

DOI

10.1103/PhysRevB.16.5460