On the Main Irradiation-Induced Defect in GaN

Authors

L. PolentaFollow
Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

4-1-2000

Abstract

We show that the usual Arrhenius analysis of the main electron-irradiation-induced defect trap in n-type GaN, observed by deep-level transient spectroscopy (DLTS), is not sufficiently accurate. Instead, an exact fitting of the DLTS spectrum for this trap reveals two components, each of which has a thermal energy near 60 meV, not the apparent 140–200 meV, as given in other DLTS studies. This result resolves the discrepancy between Hall-effect and DLTS determinations of the thermal energy of this defect center.

Comments

Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 76.15, and may be found at http://apl.aip.org/resource/1/applab/v76/i15/p2086_s1

Repository Citation

Polenta, L., Fang, Z., & Look, D. C. (2000). On the Main Irradiation-Induced Defect in GaN. Applied Physics Letters, 76 (15), 2086-2088.
https://corescholar.libraries.wright.edu/physics/63

DOI

10.1063/1.126263