The standard transmission‐line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the mobility of the material under the contact; and (ii) an extension to two layers, which makes the model applicable to MODFET structures. The results are applied to MESFET material, and MODFET material. One conclusion concerning the latter material is that the electrons directly beneath the annealed Au/Ge/Ni contacts have lower mobility than those in the bulk, but still maintain 2DEG character.
Look, D. C.
(1988). Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique. Journal of The Electrochemical Society, 135 (8), 2054-2058.
© The Electrochemical Society, Inc. 1988. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Journal of The Electrochemical Society, 135 (8), 2054-2058 (1988).