Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial layers grown at very low substrate temperatures, 200 to 400°C. For growth temperatures below 300°C, the conduction is dominated by hopping between arsenic antisite defects of concentrations up to 1020 cm−3. Below measurement temperatures of about 130 K, the hopping conduction can be quenched by strong IR light illumination, because the antisite then becomes metastable. The antisite has a thermal activation energy of , and thus is not identical to the famous EL2. Both nearest‐neighbor and variable‐range hopping mechanisms are considered in the analysis.
Look, D. C.,
Look, J. W.,
& Sizelove, J. R.
(1994). Hopping Conduction in Molecular Beam Epitaxial GaAs Grown at Very Low Temperatures. Journal of The Electrochemical Society, 141 (3), 747-750.
© The Electrochemical Society, Inc. 1994. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Journal of The Electrochemical Society, 141 (3), 747-750 (1994).