Low-Temperature Grown Semi-Insulating GaAs Layer: Defect Concentration from Lattice Constant and Resistivity

Authors

C. R. Wie
K. XieFollow
David C. Look, Wright State University - Main CampusFollow
K. R. EvansFollow
C. E. Stutz

Document Type

Conference Proceeding

Publication Date

1990

Find this in a Library

Catalog Record

Comments

Presented at the 6th Conference on Semi-Insulating III-V Materials, Ontario, Toronto, Canada.

Repository Citation

Wie, C. R., Xie, K., Look, D. C., Evans, K. R., & Stutz, C. E. (1990). Low-Temperature Grown Semi-Insulating GaAs Layer: Defect Concentration from Lattice Constant and Resistivity. Semi-Insulating III-V Materials: Toronto 1990, 71.
https://corescholar.libraries.wright.edu/physics/659