An Anomalous Deep Center (EC-0.31 eV) in Semi-Insulating GaAs
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A prominent deep center in semi-insulating GaAs, T5 at Ec×0.31 eV, has been studied by thermally stimulated current (TSC) spectroscopy using variation of illumination energy, intensity, and time. Unlike the case for most of TSC traps, the steady-state (long illumination time) peak intensity of T5 varies with light intensity. With the additional evidence that T5 seems to be related to both AsGa and VAs, it is possible that a photoinduced interaction AsGa.-VAs→VGa,-Asi-VAs is taking place.
& Look, D. C.
(1997). An Anomalous Deep Center (EC-0.31 eV) in Semi-Insulating GaAs. MRS Proceedings, 442, 405.
Presented at the 1996 MRS Fall Meeting, Boston, MA.
Copyright © Materials Research Society 1997.