Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy
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We have used an ultrahigh vacuum scanning electron microscope to carry out cross sectional secondary electron imaging, cathodoluminescence spectroscopy, and cathodoluminescence imaging on GaN grown on sapphire by hydride vapor phase epitaxy. These measurements provide evidence for deep level defects highly localized at the GaN, sapphire interface as well as defects extending into both the semiconductor film and the substrate. The different spatial distributions of these radiative defects provide information on the physical origin of these electrically active features.
Goss, S. H.,
Young, A. P.,
Brillson, L. J.,
Look, D. C.,
& Molnar, R. J.
(2001). Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy. MRS Proceedings, 639, G3.59.