Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy

Authors

Steven H. Goss
A. P. Young
Leonard J. Brillson
David C. Look, Wright State University - Main CampusFollow
Richard J. Molnar

Document Type

Conference Proceeding

Publication Date

10-2001

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Abstract

We have used an ultrahigh vacuum scanning electron microscope to carry out cross sectional secondary electron imaging, cathodoluminescence spectroscopy, and cathodoluminescence imaging on GaN grown on sapphire by hydride vapor phase epitaxy. These measurements provide evidence for deep level defects highly localized at the GaN, sapphire interface as well as defects extending into both the semiconductor film and the substrate. The different spatial distributions of these radiative defects provide information on the physical origin of these electrically active features.

Comments

Presented at the 2000 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 2001.

Repository Citation

Goss, S. H., Young, A. P., Brillson, L. J., Look, D. C., & Molnar, R. J. (2001). Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy. MRS Proceedings, 639, G3.59.
https://corescholar.libraries.wright.edu/physics/701

DOI

10.1557/PROC-639-G3.59