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In this paper we analyze GaAs grown by hydride vapor phase epitaxy (HVPE) and doped with four different iron concentrations between and . From temperature dependent current‐voltage measurements we observed the highest resistivity in the lowest doped sample. We also quantified the activation energy. These results together with those of time resolved photoluminescence measurements indicate that in the sample with the lowest Fe concentration, EL2 may be dominant. From the analysis of the time resolved photoluminescence measurements, the intrinsic EL2 concentration and the electron and hole capture cross sections of Fe in GaAs were estimated. © 2000 The Electrochemical Society. All rights reserved.


© The Electrochemical Society, Inc. 2000. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in the Journal of The Electrochemical Society, 147(8), 3109-3110 (2000).



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