Demonstration of Nearly Non-Degenerate Electron Conduction in InN Grown by Molecular Beam Epitaxy
Document Type
Article
Publication Date
5-2005
Abstract
Electrical characterization of undoped single crystal InN has always exhibited degenerate n-type conductivity. InN layers were grown by molecular beam epitaxy (MBE), and their resistivity and Hall coefficient were measured as a function of magnetic field. The variable magnetic field Hall measurements coupled with multiple-layer modeling allowed the separation of surface, film, and near surface film electrical conduction, and thus was used to remove degenerate conduction associated with surface and interfacial layers. This approach resulted in the measurement of a temperature–dependent mobility and carrier concentration, and constitutes the first detailed measurement of conduction in InN which is only partially degenerate. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Repository Citation
Swartz, C. H.,
Tomkins, R. P.,
Myers, T. H.,
Lu, H.,
& Schaff, W. J.
(2005). Demonstration of Nearly Non-Degenerate Electron Conduction in InN Grown by Molecular Beam Epitaxy. physica status solidi (c), 2 (7), 2250-2253.
https://corescholar.libraries.wright.edu/physics/720
DOI
10.1002/pssc.200461333
