We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al2O3 into GaN, over a range 100–1000 nm.
Goss, S. H.,
Sun, X. L.,
Young, A. P.,
Brillson, L. J.,
Look, D. C.,
& Molnar, R. J.
(2001). Microcathodoluminescence of Impurity Doping at Gallium Nitride/Sapphire Interfaces. Applied Physics Letters, 78 (23), 3630-3632.
Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 78.23, and may be found at http://apl.aip.org/resource/1/applab/v78/i23/p3630_s1