Microcathodoluminescence of Impurity Doping at Gallium Nitride/Sapphire Interfaces

Authors

S. H. Goss
X. L. Sun
A. P. Young
L. J. Brillson
David C. Look, Wright State University - Main CampusFollow
Richard J. Molnar

Document Type

Article

Publication Date

6-1-2001

Abstract

We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al₂O₃ interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al₂O₃ into GaN, over a range 100–1000 nm.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 78.23, and may be found at http://apl.aip.org/resource/1/applab/v78/i23/p3630_s1

Repository Citation

Goss, S. H., Sun, X. L., Young, A. P., Brillson, L. J., Look, D. C., & Molnar, R. J. (2001). Microcathodoluminescence of Impurity Doping at Gallium Nitride/Sapphire Interfaces. Applied Physics Letters, 78 (23), 3630-3632.
https://corescholar.libraries.wright.edu/physics/74

DOI

10.1063/1.1377858