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We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2 V and low reverse leakage current ~10-7 A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.


Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 83.23, and may be found at



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