Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm2/V s) and sheet charge density (>3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼ 100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼ 1.3 A/mm and a peak transconductance of ∼ 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.
Dabiran, A. M.,
Wowchak, A. M.,
Look, D. C.,
& Chow, P. P.
(2008). Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures. Applied Physics Letters, 93 (8), 82111.
Copyright © 2008, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 93.8, and may be found at http://apl.aip.org/resource/1/applab/v93/i8/p082111_s1