Ga-Related Photoluminescence Lines in Ga-Doped ZnO Grown by Plasma-Assisted Molecular-Beam Epitaxy

Authors

Z. YangFollow
David C. Look, Wright State University - Main CampusFollow
J. L. LiuFollow

Document Type

Article

Publication Date

2-1-2009

Abstract

Low-temperature photoluminescence (PL) and temperature-dependent Hall-effect (T-Hall) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8×10¹⁸ to 1.8×10²⁰ cm⁻³, the dominant PL line at 9 K changes from I₁ (3.368–3.371 eV) to I_DA (3.317–3.321 eV), and finally to I₈ (3.359 eV). The dominance of I₁, due to ionized-donor bound excitons, is unexpected in n-type samples but is shown to be consistent with the T-Hall results. We also show that I_DA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from Ga_Zn donors paired with Zn-vacancy (V_Zn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/− energy is taken from a recent theoretical calculation.

Comments

Copyright © 2009, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 94.7, and may be found at http://apl.aip.org/resource/1/applab/v94/i7/p072101_s1

Repository Citation

Yang, Z., Look, D. C., & Liu, J. L. (2009). Ga-Related Photoluminescence Lines in Ga-Doped ZnO Grown by Plasma-Assisted Molecular-Beam Epitaxy. Applied Physics Letters, 94 (7), 72101.
https://corescholar.libraries.wright.edu/physics/99

DOI

10.1063/1.3080204