GaN and Related Alloys - 2001: Volume 693
This book focuses on three main themes. Theme one - advances in basic science. Point defects, dislocations, doping, the properties of nitride alloys with a special emphasis on localization phenomena and GaAsN alloys (which are very promising for long-wavelength emitters), transport and optical properties are also featured. Theme two - growth and growth-related issues. Significant advances have been made in understanding/improving all major nitride growth techniques (MBE, MOCVD, HVPE). Techniques such as ELOG and the development of bulk-like substrates are receiving attention as methods to reduce the number of dislocations. Theme three - devices. Tremendous progress has been reported in device design and optimization, and also in understanding device processing issues such as p-contacts, laser lift-off, and etching. Overall, the book offers a broad exchange of scientific knowledge and technical expertise. Topics include: molecular beam epitaxy and growth kinetics; point defects and doping; light emitters; nitride alloys and lateral epitaxy; quantum wells; transport and optical properties; vapor phase epitaxy; extended defects; electronic devices and processing.
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Materials Research Society
Molecular Beam Epitaxy, Growth Kinetics, Point Defects, Doping, Light Emitters, Nitride Alloys, Lateral Epitaxy, Quantum Wells, Transport and Optical Properties, Vapor Phase Epitaxy, Extended Defects, Electronic Devices and Processing
Physical Sciences and Mathematics | Physics
Northrup , J. E., Neugebauer , J., Look , D. C., Chichibu , S. F., & Riechert , H. (2002). GaN and Related Alloys - 2001: Volume 693. Warrendale, PA: Materials Research Society.