Photoquenching and thermal Recovery of a thermally Stimulated Current Peak in Semi-insulating GaAs

Authors

Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

5-1-1993

Abstract

A prominent thermally stimulated current peak T₅ appearing in semi‐insulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0×10⁸ exp(−0.26 eV/kT) s⁻¹, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) T₅ and EL2 are microscopically very similar, probably each with an As_Ga core; or (2) T₅ is an electron trap that only appears to quench and recover with EL2 because EL2 controls the electron lifetime. Several other traps show similar quenching and recovery behavior.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 73.10, and may be found at http://jap.aip.org/resource/1/japiau/v73/i10/p4971_s1

Repository Citation

Fang, Z., & Look, D. C. (1993). Photoquenching and thermal Recovery of a thermally Stimulated Current Peak in Semi-insulating GaAs. Journal of Applied Physics, 73 (10), 4971-4974.
https://corescholar.libraries.wright.edu/physics/125

DOI

10.1063/1.353816