Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow

Document Type

Article

Publication Date

9-1-1996

Abstract

A simple experiment involving only the measurement of dark current I_dark and 1.1 μm photocurrent I_PC in semi‐insulating (SI) GaAs allows an accurate determination of the electron capture cross section σ_n for the important defect EL2 in GaAs. For 45 SI GaAs samples, from 12 different boules, grown by three different techniques, we find that I_PC/I_dark=1.96±0.05 at 300 K. This relationship gives σ_n=1.4±0.4×10⁻¹⁶ cm², which is compared to previously estimated values.

Comments

Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 80.6, and may be found at http://jap.aip.org/resource/1/japiau/v80/i6/p3590_s1

Repository Citation

Look, D. C., & Fang, Z. (1996). Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs. Journal of Applied Physics, 80 (6), 3590-3591.
https://corescholar.libraries.wright.edu/physics/135

DOI

10.1063/1.363233