Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN

Authors

U. V. Desnica
M. Pavlovic
Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

10-1-2002

Abstract

The report of thermoelectric effect spectroscopy (TEES) applied on semi-insulating GaN was presented. The type of TEES setup, especially suitable for film-on-substrate samples, was devised. TEES enabled determination of sign of observed deep traps. Using TEES and thermally stimulated current spectroscopy measurements in combination with the simultaneous multiple peak analysis formalism all important trap parameters were determined. The shallowest identified electron and hole traps had activation energies E_c−0.09 eV and E_v+0.167 eV, respectively. Results indicate that both these traps, oppositely charged are present in the studied material in relatively high concentrations causing the electrical compensation and high resistivity.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 92.7, and may be found at http://jap.aip.org/resource/1/japiau/v92/i7/p4126_s1

Repository Citation

Desnica, U. V., Pavlovic, M., Fang, Z., & Look, D. C. (2002). Thermoelectric Effect Spectroscopy of Deep Levels in Semi-Insulating GaN. Journal of Applied Physics, 92 (7), 4126-4128.
https://corescholar.libraries.wright.edu/physics/149

DOI

10.1063/1.1504168