Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals

Authors

K. Saarinen
T. Suski
I. Grzegory
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

11-1-2001

Abstract

We have applied positron annihilation spectroscopy to show that 2-MeV electron irradiation at 300 K creates primary Ga vacancies in GaN with an introduction rate of 1 cm^-1. The Ga vacancies recover in long-range migration processes at 500–600 K with an estimated migration energy of 1.5 (2) eV. Since the native Ga vacancies in as-grown GaN survive up to much higher temperatures (1300–1500 K), we conclude that they are stabilized by forming complexes with oxygen impurities. The estimated binding energy of 2.2 (4) eV of such complexes is in good agreement with the results of theoretical calculations.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v64/i23/e233201

Repository Citation

Saarinen, K., Suski, T., Grzegory, I., & Look, D. C. (2001). Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals. Physical Review B, 64 (23), 233201.
https://corescholar.libraries.wright.edu/physics/181

DOI

10.1103/PhysRevB.64.233201