Document Type
Article
Publication Date
11-1-1987
Abstract
By placing a semi-insulating GaAs wafer on a fiat, rare-earth magnet, and irradiating the surface with two perpendicular slits of light to form a Greek cross configuration, it is possible to perform photoresistivity and photo-Hall-effect topography on the wafer. The technique is nondestructive in that the contacts are tiny, removable In dots which are placed only on the periphery. By varying the wavelength of the light, selective centers, such as EL2, can be mapped. We compare a 1.1-μ, photoexcited electron concentration map with a quantitative EL2 map on a 3-in. undoped, liquid-encapsulated Czochralski wafer.
Repository Citation
Look, D. C.,
& Pimentel, E.
(1987). Photoresistivity and Photo-Hall-Effect Topography on Semi-insulating GaAs Wafers. Applied Physics Letters, 51 (20), 1614-1616.
https://corescholar.libraries.wright.edu/physics/34
DOI
10.1063/1.98572
Comments
Copyright © 1987, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 51.20, and may be found at http://apl.aip.org/resource/1/applab/v51/i20/p1614_s1.