Title

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

Document Type

Article

Publication Date

2011

Abstract

Traps in SiC long-gate metal-semiconductor field-effect transistors (FATFETs) at different wafer positions have been characterized by deep-level transient spectroscopy (DLTS) based on capacitance (C-DLTS) or current (I-DLTS). Two major electron traps, Z (1/2) and V (1/2), of energies 0.68 eV and 0.91 eV, respectively, are found mainly in the SiC buffer layer, and several hole-like traps appear in the surface or interface regions. In some regions of the wafer, an electron trap EH(6/7) of energy 1.77 eV is prominent. Trap EH(6/7) as well as the hole-like traps are not uniformly distributed on the wafer.

DOI

10.1007/s11664-011-1741-7