Improved Thermally Stimulated Current Analysis in Semi-insulating GaAs: New Conclusions
Document Type
Conference Proceeding
Publication Date
1996
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Abstract
Measurements of EL2 degrees and EL2(+) concentrations by IR absorption and temperature-dependent photocurrent (1.13 eV) and dark current at 80K < T < 300K in semi-insulating GaAs, allow a more accurate analysis of the thermally stimulated current spectrum. We conclude that trap T-2, at 220K, is related to As-Ga and controlled by both EL2 degrees and EL2(+), and T-3, at 200K is most likely a V-As-related defect complex..
Repository Citation
Fang, Z.,
& Look, D. C.
(1996). Improved Thermally Stimulated Current Analysis in Semi-insulating GaAs: New Conclusions. Defect Recognition and Image Processing in Semiconductors 1995: Proceedings of the Sixth International Conference, 149, 43-48.
https://corescholar.libraries.wright.edu/physics/423
Comments
This paper was presented at the 6th International Conference on Defect Recognition and Image Processing in Semiconductors, December 3-6, 1995, in Boulder, CO.