Document Type
Article
Publication Date
7-1-1993
Abstract
By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–250 °C is T5, with an activation energy of 0.27 eV and most likely related to VGa. After an anneal at 300–350 °C, another trap T6☒ appears, with an activation energy of 0.14 eV and closely identified with VAs or the complex, VAs‐AsGa. Proposed defect reactions in this As‐rich material include VGa+AsAs→VAs‐AsGa, and VGa+AsGa→VGa‐AsGa.
Repository Citation
Fang, Z.,
& Look, D. C.
(1993). Prominent Thermally Stimulated Current Trap in Low-Temperature-Grown Molecular-Beam Epitaxial GaAs. Applied Physics Letters, 63 (2), 219-221.
https://corescholar.libraries.wright.edu/physics/45
DOI
10.1063/1.110346
Comments
Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 63.2, and may be found at http://apl.aip.org/resource/1/applab/v63/i2/p219_s1?